Nmos Transistor

A Pass transistor exists when an nMOS or pMOS transistor is used alone with an imperfect switch. If AB = 01, then the capacitors are discharged through the B NMOS transistor. Funções lógicas em NMOS. 1) • General nMOS schematic – single load transistor – parallel and series nMOS transistor to complete the compliment of the desired function i. As mentioned earlier, NMOS (nMOSFET) is a type of MOSFET. An MOS transistor is a majority-carrier device In an n-typeMOS transistor, the majority carriers are electrons In a p-typeMOS transistor, the majority carriers are holes Threshold voltage It is defined as the voltage at which an MOS device begins to conduct ("turn on") MOS transistor symbols NMOS PMOS. 2nm gate oxide thickness, 0. But resistance is still an issue with the performance of the gate, and so you usually want the pulldown and pullup resistances to be similar. Seu princípio básico foi proposto pela primeira vez por Julius Edgar Lilienfeld, em 1925. Región de corte. The cmos type of switches have two gates and so have two control signals. Variables considered are the applied bias, the transistor type (NMOS or PMOS), and the transistor size. a single transistor rather than IC form. for pass transistor, both voltage levels need to be passed and hence both nmos and pkmmos. High-Side Transistors (Note the FET has a Pull-Up resistor. Parts Warranty: 90 Days. I have taken a small ckt. worry about this modification because designers typically use a transistor in triode for only sample and hold (S&H) applications, i. The simple two transistor implementation of the current mirror is based on the fundamental relationship that two equal size transistors at the same temperature with the same V GS for a MOS or V BE for a BJT have the same drain or collector current. ¾If V I Vt, so Node X does not charge beyond a point where Vgs < Vt. RF Power Transistors - Silicon Bipolar At MACOM we offer a broad range of bipolar technology RF power transistor products as discrete devices, modules, and pallets from DC to 3. The operation of the circuit can be explained as follows. High voltage transistors - Our low power loss, fast bipolar families of high-voltage transistors are ideally suited to high frequency switching in any powered application In need of bipolar transistors that can withstand high voltage pulses (EMI requirements)?. 5V Ml 4007NMO VGS VDS dc VDS 0 5 1mV VGS 04 1. Figure-1 shows the schematic of a CMOS inverter. The dotted line separates the quadratic region of operation on the left from the saturation region on the right. Derive expressions for the voltage gains vs/vi and vd/vi. Class 08: NMOS, Pseudo-NMOS Dr. I have found the W/L its 10. To measure the resistance (Ron) of the MOS transistors we first need to force a known current through the resistance and then measure the voltage across the resistance. NMOS transistors are faster than their PMOS counterpart and more of them can be put on a single chip. 1)since Gate is P and Drain is N, therefore the positive of the Diode should be on the Gate side? So, the picture with the diode should be reversed?. For the processes we will discuss, the type of transistor available is the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). 1 to 3 µm, W = 0. On the other hand, transistor MNB operates in the triode, or linear region, with a resistance equal to 1/gmB. DC Analysis of a MOSFET Transistor Circuit. NMOS transistors. Edit the file to update the NMOS model parameters KP and VTO in the. MOSFET CHARACTERISTICS AND APPLICATIONS Objective In this experiment you will study the i-v characteristics of an MOS transistor. Note: The quantity VSG −VTp is often called VDSAT,p in PMOS discussions. (rename) so that you can have different transistor models in one simulation. The NMOS fabrication steps are as per the following. O transistor MOSFET (acrônimo de Metal Oxide Semiconductor Field Effect Transistor, ou transistor de efeito de campo metal - óxido - semicondutor - TECMOS), é, de longe, o tipo mais comum de transístores de efeito de campo em circuitos tanto digitais quanto analógicos. PMOS versus NMOS equations. These transistors have their gates tied to the word line and connect the cell to the columns. This allows forming an n-type channel between the source and the drain and a current is carried by electrons from source to the drain through an induced n-type. Región lineal. The NMOS fabrication steps are as per the following. So more number. NMOS is faster than PMOS, but also more expensive to produce. The current versus voltage behavior of the N-Channel Mosfet (NMOS) transistor is explained. 3 PMOS Pass Transistor 4 CMOS Transmission Gate (TG) X X. 13 μm CMOS technology with V DD = 1. NMOS is listed in the World's largest and most authoritative dictionary database of abbreviations and acronyms. From Transistors to Functions For the purpose of this class, we will consider transistors to be the basic building blocks of computer hardware. Set values for v T, k (=µ nC ox) in Edit/Model/Edit Instance Model after clicking NbreakN3. Since this is a nice level of abstraction, most CMOS transistors are used to. Transistors are found in most electronic devices. MOSFET transistors are more important than JFETs because almost all Integrated Circuits (IC) are built with the MOS technology. 200 DESIGNING COMBINATIONAL LOGIC GATES IN CMOS Chapter 6 • A transistor can be thought of as a switch controlled by its gate signal. Table of transistor symbols. Flicker noise has inverse dependence on frequency, so it is also called 1/f noise. , they determine when the output is low “0” rather than high “1” Examples: depletion-load nMOS logic. Also, owing to the greater mobility of the charge carriers in N-channel devices, the NMOS logic family offers higher speed too. The same is true for PMOSs. We usually use NMOS because of its small on resistance and capacitance. FET = Field-Effect Transistor. 5 V and K = 0. And the pMOS transistor is strong 1 and weak 0. The composition of a PMOS transistor creates low resistance between its source and drain contacts when a low gate voltage is applied and high resistance when a high gate voltage is applied. Typical values for the important parameters of NMOS and PMOS transistors fabricated in a number of CMOS processes are shown in Table G. Power Dissipation of 20W. This two resistor biasing network is used to establish the initial operating region of the transistor using a fixed current bias. " A type of transistor used for logic and memory chips. Solve and check solutions at the end of the post. 18 um NMOS and PMOS devices were obtained from the MOSIS website (www. The MOSFET classification is further subdivided into enhancement and depletion transistors. The circuit shown is called as a "fixed base bias circuit", because the transistors base current, I B remains constant for given values of Vcc, and therefore the transistors operating point must also remain fixed. 5V, it is found to have a resistance of KΩ. May 06,2020 - For NMOS transistor which of the following is not true?a)The substrate is of p-type semiconductorb)Inversion layer or induced channel is of n typec)Threshold voltage is negatived)None of the mentionedCorrect answer is option 'C'. A CMOS, is basically an inverter logic (NOT gate), that consists of a PMOS at the top, and NMOS at the bottom (as shown in figure below), whose 'gate' and 'drain' terminal are tied together. Class 08: NMOS, Pseudo-NMOS Dr. The top FET (MP) is a PMOS type device while the bottom FET (MN) is an NMOS type. Transistor Stacking Technique Sub-threshold leakage current that is flowing through a stack of series-connected transistors decreases when more than one transistor in the stack is turned off. Solve and check solutions at the end of the post. Choosing Bipolar Transistor Replacements. NMOS inverter with current-source pull-up 3. device or a p-channel device. The original patent name for the first transistor went by this description: Semiconductor amplifier; three-electrode circuit element utilizing semi conductive materials. ¾If V I CMOS transistor circuit. com! 'Negative channel Metal-Oxide Semiconductor' is one option -- get in to view more @ The Web's largest and most authoritative acronyms and abbreviations resource. The Depletion MOSFET The physical construction of a depletion MOSFET is identical to the enhancement MOSFET, with one exception: The conduction channel is physically implanted (rather than induced)! Thus, for a depletion NMOS transistor, the channel conducts even if v GS=0! * If the value of v GS is positive, the channel is further enhanced. NMOS Spice modeling: Experiment a) Download nmoschar. thereby scaling of SRAM using minimum-size transistors is further challenging. The contraption is a current-controlled device where the collector or emitter. Pricing and Availability on millions of electronic components from Digi-Key Electronics. NMOS Pass Transistor Vmax=VDD VTn. So pls clarify my droughts. Find an expression for the incremental resistanceGive the values of r dx in terms of Ka and V ov for V DS=0. ) At least 6 levels of metal that can form many useful structures such as inductors, capacitors, and transmission lines. n(x,y)= electron concentration at point (x,y) n (x,y)=the mobility. When Vin=Vout, the NMOS has Vdg=0, which means transistor is in the saturation region, since Vds=Vgs-Vtn=Veff is where saturation occurs (onset of pinch-off). Transistor Stacking Technique Sub-threshold leakage current that is flowing through a stack of series-connected transistors decreases when more than one transistor in the stack is turned off. as indicated by the picture I have on the direction of the diode. nmos passes a good 0 and a degraded 1 , whereas pmos passes a good 1 and bad 0. The configuration, shown in Figure 1, demonstrates the NMOS transistor used as the common source amplifier. By 1999, however, we had learned that increasing the thickness of the Si3N4 etch stop layer creates more tensile strain which increases NMOS drive current by ~10%. All paths in all layers will be dimensioned in λ units and subsequently λ can be allocated an appropriate value. NMOS vs PMOS | difference between NMOS and PMOS types. A small fixed drain-source resistance is included (to avoid numerical difficulties). 3: CMOS Transistor Theory 5CMOS VLSI DesignCMOS VLSI Design 4th Ed. Since the source and drain terminals are identical in a FET. When this parameter is specified, the MOSFET has a finite but constant output conductance in saturation. - Solution λ = 0 (no channel length modulation) ! 1)R=0 V D =V G "V SD >V SG #V T "saturation I SD = 1 2 Kp W L (V SG #V T) 2= 8µ. NMOS is a type of semiconductor that charges negatively in a way by which transistor can turn on or off because of the negative electrons in it. Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistor Fig. This resistance is also why gates with a large number (> 3) of series devices are bad. This is a 4-terminal nmos transistor, the four terminals being Gate, Source, Drain and Body (or Substrate). • Voltage source easily synthesized from reference. 3E-3 VTO=I) SAT CURRENT AT VGS=4 KP/2 (4-1)A2 = 1. This can easily be. The main difference between NMOS and PMOS is that, in NMOS, the source and the drain terminals are made of n- type semiconductors whereas, in PMOS, the source and the drain are made of p-type semiconductors. 5V, it is found to have a resistance of KΩ. Because of how transistors work, these can be a little more difficult to use in an Arduino or Raspberry Pi circuit. Event Highlights. of Kansas Dept. A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. The cmos type of switches have two gates and so have two control signals. 16 se muestran las curvas de características eléctricas de un transistor NMOS con las diferentes regiones de operación que son descritas brevemente a continuación. The characteristics given in figure 23a is the vi characteristics of the NMOS and PMOS characteristics (plot of Id vs. Acknowledgement: PTM-MG is developed in collaboration with ARM. From the above figure, we can see that the input voltage of the inverter is equal to the gate to source voltage of nMOS transistor and output voltage of inverter is equal to drain to source voltage of nMOS transistor. Similarly, all NMOS transistors must have either an input from ground or from another NMOS transistor. However, Since the B PMOS transistor is off, the two upper diffusion capacitances in the circuit, the source capacitance of the B PMOS transistor and the drain capacitance of the A PMOS transistor are unable to discharge. Typically these use a PNP BJT or P-Channel MOSFET. Región de corte. Joseph Elias; Dr. Pierret, Addison-Wesley Field Oxide CROSS-SECTION of NMOS Transistor. sp file must be a comment line or be left blank. You need to select the node so that current is plotted. Mouser offers inventory, pricing, & datasheets for SMD/SMT SOT-23-3 N-Channel MOSFET. For example, if the source was at 10 volts, the gate at 15 volts, and the drain was at 20 volts, the transistor would react exactly the same as if the. PTM releases a new set of models for multi-gate transistors (PTM-MG), for both HP and LSTP applications. Mouser is an authorized distributor for many MOSFET manufacturers including Diodes Inc. Because of how transistors work, these can be a little more difficult to use in an Arduino or Raspberry Pi circuit. • Transistors can be thought as a switch controlled by its gate signal • NMOS switch closes when switch control input is high. This effect is called threshold drop. For NMOS transistors, if the input is a 1 the switch is on, otherwise it is off. NMOS and PMOS are two different types of MOSFETs. N-Channel MOSFET Basics. 1) • General nMOS schematic - single load transistor - parallel and series nMOS transistor to complete the compliment of the desired function i. I was asked to label the voltage at each node, and then which state the PFET was in. device or a p-channel device. We usually use NMOS because of its small on resistance and capacitance. Unfortunately, that 3-wire curve tracer SFP is designed to work with bipolar transistors only. When its input is active, an NMOS transistor is "pulled down" into a position that allows current to flow across its bridge, leading to the name "pull-down network" for the collection. A small fixed drain-source resistance is included (to avoid numerical difficulties). Set values for v T, k (=µ nC ox) in Edit/Model/Edit Instance Model after clicking NbreakN3. The pMOS/nMOS samples were subjected to CHC stress, applying voltage to the gate and drain with the source and bulk grounded. The NMOS and PMOS double-metal, double-poly processes are each analogous. p-channel Depletion-type MOSFET. Most questions asked are variation of the basic serially connected or cascaded NMOS structures. Both gates are connected to the input line. 43V threshold voltage. Thus, the NMOS pulldowns can be very fast. 1 are shown the operating regions and the voltage levels of NMOS transistors in NMOS inverter for critical voltage values at the. Though initially easier to manufacture, PMOS logic was later supplanted by NMOS logic using n-channel field-effect transistors. The pull-up will be a depletion mode device, and the gate will be connected to the logic gate's output. In order to find the characteristics ( V T,n and k n , and V T,p and k p ) we varied the gate voltages, measured the corresponding currents through the transistors and recorded the corresponding output voltages. GLOBAL gnd! vdd! Vgs g gnd! 0 Vds d gnd! 0 M1 d g gnd! gnd! Nch W=0. However, Since the B PMOS transistor is off, the two upper diffusion capacitances in the circuit, the source capacitance of the B PMOS transistor and the drain capacitance of the A PMOS transistor are unable to discharge. The generalized circuit structure of an nMOS inverter is shown in the figure below. How Intel Makes Chips: Transistors to Transformations REVOLUTIONARY For decades, Intel’s research and development, advanced silicon chips, and manufacturing have brought together the best of computing, communications, and consumer electronics to enable valuable benefits from technology. transistor: A transistor is a device that regulates current or voltage flow and acts as a switch or gate for electronic signals. A CMOS inverter contains a PMOS and a NMOS transistor connected at the drain and gate terminals, a supply voltage VDD at the PMOS source terminal, and a ground connected at the NMOS source terminal, were VIN is connected to the gate terminals and VOUT is connected to the drain terminals. NMOS Spice modeling: Experiment a) Download nmoschar. 1 + ½ Ì L · ä ç Ï L Ê Î Ó ç Ï where N is the total number of electron composing the channel charge, q is the electron charge, and. Transistor schematic symbols of electronic circuit - NPN, PNP, Darlington, JFET-N, JFET-P, NMOS, PMOS. There is a restricted form of switch logic, called gate logic, that behaves like unidirectional logic functions. Order Now! Discrete Semiconductor Products ship same day. and NMOS transistors are used NMOS and PMOS devices are fabricated in isolated region from each other (i. N-channel MOSFET transistors (154) P-channel MOSFET transistors (25) Power blocks (21) Power stages (32) Multi-channel ICs (PMIC) (198) Offline & isolated DC/DC controllers & converters (577) Flyback controllers (40) Flybuck converters (15) Isolated DC/DC converters & modules (75) Load share controllers (6) Offline converters (8). $Harris,$CMOS%VLSIDesign,$ ©AddisonWesley,3/e,2004! 1. Typically these use a PNP BJT or P-Channel MOSFET. A transistor is an electronic device that has three ends: a source, a sink, and a gate. Simple equations are presented for the drain current and channel resistance. of EECS The Pseudo-NMOS Load There is another type of active load that is used for NMOS logic, but this load is made from a PMOS transistor! Hence, NMOS logic that uses this load is referred to as Pseudo NMOS Logic, since not all of the devices in the. The pMOS/nMOS samples were subjected to CHC stress, applying voltage to the gate and drain with the source and bulk grounded. Previous Post 7. With a gain of 1000 very little base current is needed to be switched though the 4N25. NMOS FETs are more attractive than PMOS FETs for high-current applications, because NMOS FETs offer lower on-resistance than PMOS counterparts of the same size. and NMOS transistors are used NMOS and PMOS devices are fabricated in isolated region from each other (i. It can be superior understood by allowing for the fabrication of a single enhancement-type transistor. This is done by taking the absolute value of the current. NMOS Fabrication Steps. But resistance is still an issue with the performance of the gate, and so you usually want the pulldown and pullup resistances to be similar. The configuration, shown in Figure 1, demonstrates the NMOS transistor used as the common source amplifier. by employing nmos transistors to realize the required gates of PLA. Cross-Section of CMOS Technology. nmos-transistor 33 points 34 points 35 points 1 year ago It's sad that the guy being a healthy weight is more unrealistic than the robot. For the NMOS, V T = 1. BUY TRANSISTORS. Depending on the applied DC bias, MOSFETs. The composition of a PMOS transistor creates low resistance between its source and drain contacts when a low gate voltage is applied and high resistance when a high gate voltage is applied. The ‘gate’ terminals of both the MOS transistors is the input side of an inverter, whereas, the ‘drain’ terminals form the output side. We proposed a physics based statistical PBTI model in [11] where the location of each of the traps were considered separately. Transistors consist of three layers of a semiconductor material, each capable of carrying a current. OPTION POST. Because CCx pins are open drain, a pullup resistor needs to be added from V CC to CCx. If LAMBDA is not input, the Level 1 model assumes zero output conductance. Class 08: NMOS, Pseudo-NMOS Dr. A virtual “p-type” channel is formed in a P-MOS (holes are carriers in the channel) by applying a negative v GS. 5V, V T = 0. 43V threshold voltage. MOS Inverter Circuits October 25, 2005 Contents: 1. N-Channel MOSFET Basics. Large signal behavior of MOS transistors The NMOS transistor is a strongly nonlinear device. Choosing Bipolar Transistor Replacements. N-channel MOSFET transistors (154) P-channel MOSFET transistors (25) Power blocks (21) Power stages (32) Multi-channel ICs (PMIC) (198) Offline & isolated DC/DC controllers & converters (577) Flyback controllers (40) Flybuck converters (15) Isolated DC/DC converters & modules (75) Load share controllers (6) Offline converters (8). The current versus voltage behavior of the N-Channel Mosfet (NMOS) transistor is explained. Applied Science 834,993 views. 8: MOSFET Simulation PSPICE simulation of NMOS 2. EE 230 NMOS examples – 4 NMOS examples For the circuit shown, use the the NMOS equations to find i D and v DS. NMOS and PMOS devices M 1 and M 2 are contained in the CD4007 package. For example, if the source was at 10 volts, the gate at 15 volts, and the drain was at 20 volts, the transistor would react exactly the same as if the. Using three-dimensional (3-D) process and design simulations, transistor designs are optimized. (Another kind of transistor is the Junction Field Effect Transistor of JFET. Once V GS reaches 0. of EECS The Pseudo-NMOS Load There is another type of active load that is used for NMOS logic, but this load is made from a PMOS transistor! Hence, NMOS logic that uses this load is referred to as Pseudo NMOS Logic, since not all of the devices in the. A PMOS can be constructed analogous to an NMOS: (n-type body), heavily doped p-type source and drain. Thus, the CMOS TG operates as a bidirectional switch between the nodes A and B which is controlled by signal C. MOS transistors - types and symbols D D G G S NMOS Enhancement S NMOS Depletion D D G G B S S PMOS Enhancement NMOS ith B. ) Recall that a diode consists of a n doped (or excess. Its transfer characteristics depends on the bias conditions. CMOS technology combines both n-channel and p-channel MOSFETs to provide very low power consumption along with high speed. These solenoids are activated by NMOS transistors. NMOS and PMOS are two different types of MOSFETs. NMOS inverter with resistor pull-up (cont. !!!!! CMOS inverter Add a PMOS transistor (MbreakP3 from the Breakout menu) to make a CMOS inverter, as shown below. The trap generation process in dielectric layers depends on stress time (t), temperature (T), and, the applied gate bias (V G) and the number of generated traps (N G) can be modeled as follows: N G. The composition of a PMOS transistor creates low resistance between its source and drain contacts when a low gate voltage is applied and high resistance when a high gate voltage is applied. sp file must be a comment line or be left blank. This model will point out limitation of nMOS switch logic. Voltage drop across the 2nd transistor collector-emitter is pretty high, 2 to 4V depending on current. The output of the final one went into the source of a PFET, with the drain tied to ground and the gate tied to some voltage, I forget exactly what. Complementary stands for the fact that in CMOS technology based logic, we use both p-type devices and n-type devices. The MOSFET's model card specifies which type is intended. Applied bias:. 5 V and K = 0. A MOSFET transistor is a three terminal semiconductor device in which current, flowing from the drain-source terminals, is controlled by the voltage on the gate terminal ( Figure 1a). In actual projects, we basically use enhanced type. To best understand this important circuit building. Cross-Section of CMOS Technology. Assume Vt = 0. 200 DESIGNING COMBINATIONAL LOGIC GATES IN CMOS Chapter 6 • A transistor can be thought of as a switch controlled by its gate signal. Hai I am new to design. BUY TRANSISTORS. Note: The quantity VSG −VTp is often called VDSAT,p in PMOS discussions. MOSFET CHARACTERISTICS AND APPLICATIONS Objective In this experiment you will study the i-v characteristics of an MOS transistor. An NMOS two-input NAND cell. MOS TRANSISTOR REVIEW 3D band diagram of a long channel enhancement mode NMOS transistor VG = VD = 0 VG > VT VD > 0 VG > 0 VD = 0. Current in transistor is very low until the gate voltage crosses the threshold voltage of device (same threshold voltage as MOS capacitor) Current increases rapidly at first and then it finally reaches a point where it simply increases linearly VGS IDS VT VGS IDS VDS. The pMOS transistor conducts when the gate is asserted in negative logic. 5 times wider than the nMOS of the same length. If you do, all the sources of the different NMOS transistors will be connected to each other. This is done by taking the absolute value of the current. This two resistor biasing network is used to establish the initial operating region of the transistor using a fixed current bias. MOSFET TRANSISTOR SUMMARY NMOS Transistor (p. PMOS : PMOS is constructed with p-source and drain and an n-substrate. We usually use NMOS because of its small on resistance and capacitance. If AB = 01, then the capacitors are discharged through the B NMOS transistor. BS170/D BS170 Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226) Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 60 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 s) VGS VGSM ±20 ±40 Vdc Vpk Drain Current (Note) ID 0. Two NMOS transistors are pass-transistors. A PMOS can be constructed analogous to an NMOS: (n-type body), heavily doped p-type source and drain. For the gate and drain voltages, the most damaging CHC conditions were chosen: V G = V D for pMOS (independently of the channel length) and V G = V D /2 and V G = V D for long and short channel nMOS transistors, respectively. Texas Instruments has released the TPL7407LA/TPL7407LA-Q1 low-side driver ICs, which are high-voltage, high-current NMOS transistor arrays. In this case, we only have one pmos and nmos transistor. MOS Transistor I-V Derivation Coordinate Definitions for our “NMOS” Transistor x=depth into the semiconductor from the oxide interface. NMOS transistors. Wiring the MOSFET Transistor: The MOSFET transistor is an easy way to allow your Arduino or other micro-controller to handle voltages larger than the 5 volts available for each pin. In actual projects, we basically use enhanced type. Allows current flow when high potential at base (middle) #N#PNP Bipolar Transistor. The output line connects to the drains of both FETs. Figure 1: Measuring Transistor f t When creating a simulation test bench the natural place to start is the actual measurement test bench. Please start from models and param. So PMOS has VDD as source, naturally when input is zero drain would be pulled up. Helpful Strain in Transistors with Selective Material Deposition Increased electron mobility through tensile strain in nMOS transistor TENSILE STRAIN nMOS CHANNEL nMOS Epi S/D nMOS Epi S/D Achieved by incorporating smaller P or C & P atoms A Carbon atom size is 62% that of a Silicon atom Silicon Systems Group. 5V This problem has been solved!. NMOS synonyms, NMOS pronunciation, NMOS translation, English dictionary definition of NMOS. Monolithic MOSFETS are four terminal devices. Get it ! Order in the next and choose Two-Day shipping at checkout. 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